(China (Mainland))
Product Summary
The IXFM40N30 is an HiPerFET Power MOSFET. Applications of the IXFM40N30 are DC-DC converters, Synchronous rectification, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, AC motor control, Temperature and lighting controls, Low voltage relays.
Parametrics
IXFM40N30 absolute maximum ratings: (1)VDSS TJ = 25℃ to 150℃: 300 V; (2)VDGR TJ = 25℃ to 150℃; RGS = 1 M: 300 V; (3)VGS Continuous: 20 V; (4)VGSM Transient: 30 V; (5)ID25 TC = 25℃: 35 A; (6)IDM TC = 25℃, pulse width limited by TJM: 140 A; (7)IAR TC = 25℃: 35 A; (8)EAR TC = 25℃: 30 mJ; (9)PD TC = 25℃: 300 W; (10)TJ: -55 to +150℃; (11)TJM: 150℃; (12)Tstg -55 : +150℃.
Features
IXFM40N30 features: (1)International standard packages; (2)Low RDS (on)HDMOS process; (3)Rugged polysilicon gate cell structure; (4)Unclamped Inductive Switching (UIS)rated; (5)Low package inductance - easy to drive and to protect; (6)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFM40N30 |
Ixys |
MOSFET 40 Amps 300V 0.088 Rds |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
IXFM10N100 |
Ixys |
MOSFET 10 Amps 1000V 1.2 Rds |
Data Sheet |
Negotiable |
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|
IXFM10N90 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFM11N80 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXFM12N100 |
Ixys |
MOSFET 12 Amps 1000V 1.05 Rds |
Data Sheet |
Negotiable |
|
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|
IXFM12N90 |
Ixys |
MOSFET 12 Amps 900V 0.9 Rds |
Data Sheet |
Negotiable |
|
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|
IXFM13N50 |
Ixys |
MOSFET 13 Amps 500V 0.4 Rds |
Data Sheet |
Negotiable |
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