BU2520DF

high-voltage, high-speed switching npn transistor, 1500 V, 10 A, 45 W, TO-3P

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Price:: US $1.00~10.00 / piece [Get Latest Price]

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	US $1.00~10.00

PartNumber:: BU2520DF

Brand:: Philips Electronics India Limited - PHILIPS | Pack: TO | D/C: 04+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-10-29

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Product Summary

The BU2520DF is a new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

Parametrics

BU2520DF absolute maximum ratings: (1)VCESM Collector-emitter voltage peak value VBE = 0 V: 1500 V; (2)VCE℃ollector-emitter voltage (open base): 800 V; (3)IC Collector current (DC): 10 A; (4)ICM Collector current peak value: 25 A; (5)IB Base current (DC): 6 A; (6)IBM Base current peak value: 9 A; (7)IB(AV)Reverse base current average over any 20 ms period: 150 mA; (8)IBM Reverse base current peak value: 6 A; (9)Ptot Total power dissipation Ths 25 ℃: 45 W; (10)Tstg Storage temperature: -65 to 150 ℃; (11)Tj Junction temperature: 150 ℃.

Features

BU2520DF features: (1)VCESM Collector-emitter voltage peak value VBE = 0 V: 1500 V; (2)VCE Collector-emmiter voltage (open base): 800 V; (3)IC Collector current (DC): 10 A; (4)ICM Collector current peak value: 25 A; (5)Ptot Total power dissipation Ths 25 °C: 45 W; (6)VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A: 5.0 V; (7)ICsat Collector saturation current: 6 A; (8)VF Diode forward voltage IF = 6.0 A: 2.2 V; (9)tf Fall time ICsat = 6.0 A; IB(end)= 1.0 A: 0.5 ms.