K9F1208UOC-PCB

64M x 8 Bit NAND Flash Memory, 4.6V, 5 mA, 15ms, SOP

Rated 5 Rating 5 | reviews | Write a review

Price:: US $2.00~10.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $2.00~10.00

PartNumber:: K9F1208UOC-PCB

Brand:: Samsung semiconductor - SAMSUNG | Pack: SOP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Mr. J's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-11-12

From Other Seller

Part Number:K9F1208UOC-PCB
US $2.00 - 10.00
ECA1HHG4R7

US $10.00 - 10.00 / Piece
(0) Remove
ECA1HHG220

US $2.00 - 10.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The K9F1208UOC-PCB is a 64M x 8 Bit NAND Flash Memory. The K9F1208UOC-PCB is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

Parametrics

K9F1208UOC-PCB absolute maximum ratings: (1)Voltage on any pin relative to VSS: VIN/OUT: -0.6V to +4.6V, VCC: -0.6V to +4.6V, VCCQ: -0.6V to +4.6V; (2)Temperature Under Bias: -10℃ to +125℃; (3)Storage Temperature: -65℃ to +150℃; (4)Short Circuit Current: 5 mA.

Features

K9F1208UOC-PCB features: (1)Voltage Supply:2.7V to 3.6V; (2)Organization: Memory Cell Array: (64M + 2048K)bit x 8 bit, Data Register:(512 + 16)bit x 8bit; (3)Automatic Program and Erase: Page Program : (512 + 16)Byte, Block Erase : (16K + 512)Byte; (4)Page Read Operation: Page Size: (512 + 16)Byte, Random Access: 15ms(Max.), Serial Page Access: 50ns(Min.); (5)Fast Write Cycle Time: Program time: 200ms(Typ.), Block Erase Time: 2ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port Hardware Data Protection: Program/Erase Lockout During Power Transitions; (7)Reliable CMOS Floating-Gate Technology: Endurance: 100K Program/Erase Cycles, Data Retention: 10 Years; (8)Command Register Operation; (9)Intelligent Copy-Back ; (10)Unique ID for Copyright Protection.